SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE

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United States of America Patent

SERIAL NO

14937429

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Abstract

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A semiconductor device includes first pillar-shaped semiconductor layers, a first gate insulating film formed around the first pillar-shaped semiconductor layers, gate electrodes formed of metal and formed around the first gate insulating film, gate lines formed of metal and connected to the gate electrodes, a second gate insulating film formed around upper portions of the first pillar-shaped semiconductor layers, first contacts formed of a first metal material and formed around the second gate insulating film, second contacts formed of a second metal material and connecting upper portions of the first contacts and upper portions of the first pillar-shaped semiconductor layers, second diffusion layers formed in lower portions of the first pillar-shaped semiconductor layers, pillar-shaped insulator layers formed on the second contacts, variable-resistance films formed around upper portions of the pillar-shaped insulator layers, and lower electrodes formed around lower portions of the pillar-shaped insulator layers and connected to the variable-resistance films.

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Patent Owner(s)

Patent OwnerAddress
UNISANTIS ELECTRONICS SINGAPORE PTE LTDSINGAPORE 179098

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
MASUOKA, Fujio Tokyo, JP 412 6771
NAKAMURA, Hiroki Tokyo, JP 382 4527

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