Method for Integrated Circuit Patterning
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United States of America Patent
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Issued Date -
Mar 3, 2016
app pub date -
Mar 11, 2015
filing date -
Aug 28, 2014
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Abstract
Provided is a method of patterning a substrate. The method includes patterning a resist layer formed over the substrate to result in a resist pattern and treating the resist pattern with an ion beam. The ion beam is generated with a gas, such as CH4, SiH4, Ar, or He; and is directed towards the resist pattern at a tilt angle at least 10 degrees. In embodiments, the ion beam is directed towards the resist pattern at a uniform twist angle, or at a twist angle having a unimodal or bimodal distribution. The ion beam reduces line edge roughness (LER), line width roughness (LWR), and/or critical dimension of the resist pattern. The method further includes etching the substrate with the treated resist pattern as an etch mask.
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