METHOD FOR TREATING INNER WALL SURFACE OF MICRO-VACANCY

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United States of America Patent

APP PUB NO 20160064213A1
SERIAL NO

14784725

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Abstract

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There is provided a method for processing an inner wall surface of a micro vacancy, capable of reliably etching and cleaning even if the hole provided to the substrate to be processed is narrow and deep. The substrate has a surface on which a processing solution is to be applied and a micro vacancy with an opening on the surface. An aspect ratio (l/r) of the micro vacancy being at least 5, or the aspect ratio being less than 5 and a ratio (V/S) of a micro vacancy volume (V) to a surface area of the opening (S) being at least 3. The substrate is arranged in a processing space. Next, the processing space is depressurized, and subsequently the processing solution is introduced into the processing space so as to process the inner wall surface of the micro vacancy.

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Patent Owner(s)

Patent OwnerAddress
TOHOKU UNIVERSITYSENDAI
STELLA CHEMIFA CORPORATIONOSAKA-SHI OSAKA 541-0044

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hasebe, Rui Sakai-shi, JP 7 7
Hiratsuka, Ryosuke Sendai-shi, JP 2 6
Ishikawa, Syun Sendai-shi, JP 2 6
Kikuyama, Hirohisa Sakai-shi, JP 45 501
Ohmi, Tadahiro Sendai-shi, JP 798 14083
Sakai, Takeshi Sendai-shi, JP 195 1551
Takano, Jun Sakai-shi, JP 54 282
Yamamoto, Masashi Sakai-shi, JP 166 2181
Yoshida, Tatsuro Sendai-shi, JP 77 1205

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