Importance

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Abstract

It is a subject of the present invention to provide a cleaning agent for a substrate having a metal wiring, and a cleaning method for a semiconductor substrate comprising that the cleaning agent is used, by which following effects (1) to (5) are obtained, in a cleaning process after chemical mechanical polishing (CMP) in a manufacturing process of a semiconductor device. (1) Residues of fine particles (polishing agents) used in the CMP process, fine particles (metal particles) derived from a polished metal, an anticorrosive, and the like, can be removed sufficiently. (2) A coating film (protective film: oxidation resistant film) on a surface of the metal wiring, containing a complex between an anticorrosive, such as benzotriazole or quinaldic acid, and a surface metal of the metal wiring, formed in the CMP process, can be removed (stripped) sufficiently. (3) An oxide film containing a metal oxide can be formed after removal (stripping) of the coating film. (4) A semiconductor substrate can be obtained stably for a long period of time, without impairing flatness of the surface of the metal wiring (the surface of the oxide film containing the metal oxide), even leaving a substrate after the cleaning process after the CMP. (5) It is hard to deteriorate even after using the cleaning agent for a long period of time.

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First Claim