SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF PRODUCING THE SAME
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United States of America Patent
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Issued Date -
Feb 25, 2016
app pub date -
Mar 7, 2014
filing date -
Apr 10, 2013
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Abstract
The invention is a semiconductor light emitting device successively including a conductive support substrate, a metal layer, and a light emitting part successively including an n-type current spreading layer, an n-type cladding layer, an active layer, a p-type cladding layer, and a p-type current spreading layer, which are made of an AlGaInP-based semiconductor layer. This device also includes a first thin ohmic electrode partially covering the p-type current spreading layer and a second thin ohmic electrode partially provided between the metal and n-type current spreading layers. The first and second thin ohmic electrodes are disposed so as not to overlap when seen from above. The lattice constant of the n-type current spreading layer matches that of the n-type cladding layer. The invention provides a P-side-up metal reflection type of semiconductor light emitting device having high luminance that inhibits increase in thickness of semiconductor layers and keeps current from locally concentrating.
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