NITRIDE LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME

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United States of America Patent

APP PUB NO 20160056327A1
SERIAL NO

14781271

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Abstract

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Provided is a nitride light emitting element which achieves a high light extraction efficiency even at a low operation voltage and which can be manufactured by means of a simple process. A nitride light emitting element 1 has, on a support substrate 11, an n-type layer 35, a p-type layer 31, and a light emitting layer 33 formed at a position interposed between the n-type layer 35 and the p-type layer 31. The n-type layer 35 is constituted of AlxGa1-xN (0

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Patent Owner(s)

Patent OwnerAddress
USHIO DENKI KABUSHIKI KAISHATOKYO-TO 100-8150

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  • 2014 Application Filing Year
  • H01L Class
  • 23828 Applications Filed
  • 21803 Patents Issued To-Date
  • 91.51 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances2014201520162017201820192020202120222023202420250255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
MIYOSHI, Kohei Hyogo, JP 41 394
SUGIYAMA, Toru Hyogo, JP 138 1630
TSUKIHARA, Masashi Hyogo, JP 15 67

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  • 3 Citation Count
  • H01L Class
  • 13.47 % this patent is cited more than
  • 9 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges1792827316886303131891006776342711301 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +050010001500200025003000350040004500500055006000650070007500800085009000

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