NITRIDE LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
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United States of America Patent
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N/A
Issued Date -
Feb 25, 2016
app pub date -
Mar 24, 2014
filing date -
Mar 29, 2013
priority date (Note) -
Published
status (Latency Note)
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Abstract
Provided is a nitride light emitting element which achieves a high light extraction efficiency even at a low operation voltage and which can be manufactured by means of a simple process. A nitride light emitting element 1 has, on a support substrate 11, an n-type layer 35, a p-type layer 31, and a light emitting layer 33 formed at a position interposed between the n-type layer 35 and the p-type layer 31. The n-type layer 35 is constituted of AlxGa1-xN (0
First Claim
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Family

- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
USHIO DENKI KABUSHIKI KAISHA | TOKYO-TO 100-8150 |
International Classification(s)

- 2014 Application Filing Year
- H01L Class
- 23828 Applications Filed
- 21803 Patents Issued To-Date
- 91.51 % Issued To-Date
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
MIYOSHI, Kohei | Hyogo, JP | 41 | 394 |
# of filed Patents : 41 Total Citations : 394 | |||
SUGIYAMA, Toru | Hyogo, JP | 138 | 1630 |
# of filed Patents : 138 Total Citations : 1630 | |||
TSUKIHARA, Masashi | Hyogo, JP | 15 | 67 |
# of filed Patents : 15 Total Citations : 67 |
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Patent Citation Ranking
- 3 Citation Count
- H01L Class
- 13.47 % this patent is cited more than
- 9 Age
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