THIN FILM TRANSISTOR AND FABRICATING METHOD THEREOF
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United States of America Patent
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Issued Date -
Feb 25, 2016
app pub date -
Oct 22, 2014
filing date -
Aug 19, 2014
priority date (Note) -
Abandoned
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Abstract
A thin film transistor and a fabricating method thereof is provided. The thin film transistor includes a gate, a gate insulation layer, a semiconductor layer, a conductive pattern, a first electrode and a second electrode. The gate is disposed on a substrate. The gate insulation layer is disposed on the substrate to cover the gate.
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