HIGH-VOLTAGE METAL-OXIDE-SEMICONDUCTOR TRANSISTOR DEVICE WITH INCREASED CUTOFF FREQUENCY
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Feb 25, 2016
app pub date -
Aug 25, 2014
filing date -
Aug 25, 2014
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A HVMOS transistor structure includes a semiconductor substrate; a gate overlying the semiconductor substrate; a gate dielectric layer between the gate and the semiconductor substrate; a sidewall spacer on each sidewall of the gate; a drain structure in the semiconductor substrate on one side of the gate; an ion well of the first conductivity type in the semiconductor substrate; a source structure in the semiconductor substrate being space apart from the drain structure; and a channel region between the drain structure and the source structure, wherein the channel region substantially consisting of two gate-overlapping regions of the first conductivity type having doping concentrations different from each other.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully