Radiation Sensor, and its Application in a Charged-Particle Microscope
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Aug 24, 2015
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Aug 25, 2014
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Abstract
A pixelated CMOS radiation sensor (e.g. in a 4T pinned photodiode device) that comprises a layered structure including:
- A p-type Si substrate;An n-doped region within said substrate;A p+-doped pinning layer that overlies said n-doped region;An SiOx layer that overlies said p+-doped pinning layer and serves as a Pre-Metal Dielectric or Inter-Metal Dielectric layer,in which a Boron film is deposited between said p+-doped pinning layer and said SiOx layer. Application of such a (pure) Boron film serves to reduce leakage current by one or more orders of magnitude. Even a relatively thin Boron film (e.g. thickness 1-2 nm) can produce this effect.
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