GERMANIUM CHEMICAL MECHANICAL POLISHING
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United States of America Patent
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Issued Date -
Feb 25, 2016
app pub date -
Aug 22, 2014
filing date -
Aug 22, 2014
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Abstract
A method of planarizing/polishing germanium is described. The method comprises the step of abrading the surface of a substrate comprising germanium with an aqueous chemical mechanical polishing (CMP) composition comprising an oxidizing agent, a particulate abrasive, and a germanium etching inhibitor. The germanium etching inhibit is selected from the group consisting of a water-soluble polymer, an amino acid having a non-acidic side chain, a bis-pyridine compound, and a combination of two or more thereof. The polymer can be a cationic or nonionic polymer that comprises basic nitrogen groups, amide groups, or a combination thereof.
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