MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND SEMICONDUCTOR LIGHT-EMITTING ELEMENT
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United States of America Patent
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Issued Date -
Feb 18, 2016
app pub date -
Mar 28, 2014
filing date -
Mar 29, 2013
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Abstract
There are provided a setting process configured to set in a chamber an aluminum nitride substrate in which a semiconductor layer is formed on a first principal plane, and an oxide film forming process configured to heat an inside of the chamber with a water molecule being introduced in the chamber and to form an oxide film including an amorphous oxide film and/or a crystalline oxide film on a second principal plane located on an opposite side to the first principal plane of the aluminum nitride substrate.
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