Methods of manufacturing semiconductor device
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United States of America Patent
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Aug 9, 2016
Grant Date -
Feb 18, 2016
app pub date -
Apr 21, 2015
filing date -
Aug 14, 2014
priority date (Note) -
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Abstract
The present inventive concept provides methods of manufacturing a semiconductor device including forming an inner mask layer on an etching target film, the inner mask layer including a polymer; forming a porous film on the etching target film, the porous film covering the inner mask layer; supplying an acid source to an outer surface area of the inner mask layer through the porous film; inducing a chemical reaction of the polymer included in the inner mask layer in the outer surface area by using the acid source; forming inner mask patterns by removing a chemically reacted portion of the inner mask layer; and etching the etching target film by using at least a portion of the porous film and the inner mask patterns as an etching mask.
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