PROGRAMMABLE RESISTANCE MEMORY ELEMENTS WITH ELECTRODE INTERFACE LAYER AND MEMORY DEVICES INCLUDING THE SAME
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United States of America Patent
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Issued Date -
Feb 11, 2016
app pub date -
Jul 4, 2015
filing date -
Mar 26, 2012
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Abstract
A memory element can include a first electrode comprising at least a first element; a second electrode formed of a conductive material; and a memory layer comprising a memory material programmable between different resistance states. The first element can be ion conductible within the memory material. A second electrode can include an interface layer in contact with the memory layer. The interface layer being formed by inclusion of at least one modifier element not present in a remainder of the second electrode and not ion conductible within the memory material.
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