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Abstract

A method of manufacturing a thin film transistor, comprising: forming a gate electrode (2) on a first surface of a substrate (1); forming on the first surface of the substrate a gate dielectric layer (3) covering the gate electrode; forming a metal oxide semiconductor layer (4) on the gate dielectric layer; processing the metal oxide semiconductor layer to form a channel region (5) exposed thereon; anode-oxidizing the channel region, such that the channel region has a first carrier concentration; and conducting photolithography and etching the metal oxide semiconductor layer to form an active region, the active region comprising the channel region, and a source region (6) and a drain region (7) located at the two sides of the channel region and having a second carrier concentration, the first carrier concentration being lower than the second carrier concentration. The source region, the drain region and the channel region of a thin film transistor manufactured using the above method are located on the same film layer, and the channel region has a carrier concentration lower than the carrier concentration of the source region and the drain region.

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First Claim