METHOD AND SYSTEM FOR FORMATION OF P-N JUNCTIONS IN GALLIUM NITRIDE BASED ELECTRONICS
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
N/A
app pub date -
Aug 12, 2015
filing date -
Aug 4, 2011
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A semiconductor device includes a III-nitride substrate having a first conductivity type and a first electrode electrically coupled to the III-nitride substrate. The semiconductor device also includes a III-nitride material having a second conductivity type coupled to the III-nitride substrate at a regrowth interface and a p-n junction disposed between the III-nitride substrate and the regrowth interface.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully