MEMORY CIRCUIT STRUCTURE AND SEMICONDUCTOR PROCESS FOR MANUFACTURING THE SAME
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United States of America Patent
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Oct 8, 2015
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Nov 21, 2013
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Abstract
A memory circuit structure includes a substrate, a plurality of word lines disposed and evenly-spaced on the substrate, wherein the width of said word lines is F, and a select gate adjacent to the word lines, wherein the width of the select gate is (7+4n)F, and n is zero or positive integer.
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