Method of making a transistor
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United States of America Patent
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May 22, 2018
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N/A
app pub date -
Oct 26, 2015
filing date -
Feb 11, 2013
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Abstract
The invention relates to a method for manufacturing a transistor comprising the preparation of a stack of layers of the semiconductor on insulator type comprising at least one substrate on which an insulating layer and an initial semiconductor layer are successively disposed. The method includes the formation of at least one oxide pad extending from a top face of the insulating layer, the formation of an additional layer made from semiconductor material covering the oxide pad and intended to form a channel for the transistor, the formation of a gate stack above the oxide pad, and the formation of a source and drain on either side of the gate stack.
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