COVERAGE OF HIGH ASPECT RATIO FEATURES USING SPIN-ON DIELECTRIC THROUGH A WETTED SURFACE WITHOUT A PRIOR DRYING STEP
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United States of America Patent
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Issued Date -
Feb 11, 2016
app pub date -
Aug 11, 2014
filing date -
Aug 11, 2014
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Abandoned
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Abstract
A method includes depositing a film solution onto a patterned feature of a semiconductor substrate after wet cleaning the semiconductor substrate and without performing a drying step after the wet cleaning. The film solution includes a dielectric film precursor or a dielectric film precursor and at least one of a reactant, a solvent, a surfactant and a carrier fluid. The method includes baking at least one of solvent and unreacted solution out of a film formed by the film solution by heating the substrate to a baking temperature. The method includes curing the substrate.
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