Tungsten Film Forming Method
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United States of America Patent
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Issued Date -
Feb 11, 2016
app pub date -
Aug 6, 2015
filing date -
Aug 11, 2014
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Abstract
A tungsten film forming method includes forming a tungsten film on a surface of a substrate to be processed by sequentially supplying a WCl6 gas as a tungsten source gas, a reducing gas composed of a reducible gas including hydrogen and a purge gas into a chamber which accommodates the substrate and which remains in a depressurized atmosphere. A Cl2 gas is simultaneously supplied when supplying the WCl6 gas.
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