COMPOUND SEMICONDUCTOR STACK AND SEMICONDUCTOR DEVICE
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United States of America Patent
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Feb 4, 2016
app pub date -
Mar 25, 2014
filing date -
Mar 25, 2013
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There is provided a compound semiconductor stack including a substrate (101) of which electrical resistance is greater than or equal to 1×105 Ωcm, a first compound semiconductor layer (102) which is formed on the substrate (101), and contains In and Sb doped with carbon, and a second compound semiconductor layer (103) which is formed on the first compound semiconductor layer (102), has a carbon concentration less than a carbon concentration of the first compound semiconductor layer (102), and contains In and Sb. A film thickness of the first compound semiconductor layer (102) is greater than or equal to 0.005 μm and less than or equal to 0.2 μm. In addition, the carbon concentration of the first compound semiconductor layer (102) is greater than or equal to 1×1015 cm−3 and less than or equal to 5×1018 cm−3.
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