SEMICONDUCTOR CIRCUIT STRUCTURE
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United States of America Patent
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app pub date -
Oct 12, 2015
filing date -
Apr 6, 2012
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Abandoned
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Abstract
A NAND flash circuit structure includes two select gates disposed on a substrate, and an even number of spaced-apart word lines disposed between the two select gates. The select gate is provided with a first portion and a second portion. The thickness of the first portion and the second portion are different.
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