Atomic Layer Deposition Method Using Source Precursor Transformed by Hydrogen Radical Exposure
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United States of America Patent
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Feb 4, 2016
app pub date -
Jul 24, 2015
filing date -
Aug 4, 2014
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Abstract
A film of source precursor molecules injected onto a substrate are reacted with hydrogen radicals, such as those produced in a hydrogen plasma, prior to reaction with a reactant precursor. This replaces the functional groups of the reactant precursor (e.g., methyl groups in alkyl groups) with hydrogen, thus reducing the overall size of the source precursor molecule. An additional cycle of source precursor molecules are injected onto the substrate, some of which occupy portions of the substrate surface left unoccupied by the now absent methyl functional groups. This increases the density of source precursor molecules (i.e., reaction sites) on the substrate. The reactivity of the source precursor molecules exposed to hydrogen radicals (or an H2 plasma) is also increased.
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