GROWTH OF GRAPHENE FILMS FROM NON-GASEOUS CARBON SOURCES

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United States of America Patent

SERIAL NO

14754983

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Abstract

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In various embodiments, the present disclosure provides methods of forming graphene films by: (1) depositing a non-gaseous carbon source onto a catalyst surface; (2) exposing the non-gaseous carbon source to at least one gas with a flow rate; and (3) initiating the conversion of the non-gaseous carbon source to the graphene film, where the thickness of the graphene film is controllable by the gas flow rate. Additional embodiments of the present disclosure pertain to graphene films made in accordance with the methods of the present disclosure.

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Patent Owner(s)

Patent OwnerAddress
WILLIAM MARSH RICE UNIVERSITY6100 MAIN STREET HOUSTON TX 77005

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Peng, Zhiwei Houston, US 21 486
Ruan, Gedeng Houston, US 12 108
Sun, Zhengzong Houston, US 5 137
Tour, James M Bellaire, US 171 2263
Yan, Zheng Houston, US 118 2885

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