Integrated Circuitry, Methods of Forming Capacitors, and Methods of Forming Integrated Circuitry Comprising an Array of Capacitors and Circuitry Peripheral to the Array
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United States of America Patent
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app pub date -
Jul 2, 2015
filing date -
Oct 18, 2011
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Abandoned
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Abstract
A method of forming capacitors includes providing a support material over a substrate. The support material is at least one of semiconductive or conductive. Openings are formed into the support material. The openings include at least one of semiconductive or conductive sidewalls. An insulator is deposited along the semiconductive and/or conductive opening sidewalls. A pair of capacitor electrodes having capacitor dielectric there-between is formed within the respective openings laterally inward of the deposited insulator. One of the pair of capacitor electrodes within the respective openings is laterally adjacent the deposited insulator. Other aspects are disclosed, including integrated circuitry independent of method of manufacture.
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