PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE

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United States of America Patent

APP PUB NO 20160027783A1
SERIAL NO

14774700

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Abstract

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One production method for semiconductor devices includes sequentially forming a stopper film and a BPSG film, forming a cylinder etch laminated mask upon the BPSG film, forming openings having a prescribed pattern in the cylinder etch laminated mask, then, using same as a mask, forming a cylinder hole that pierces from the BPSG film to the stopper film in the thickness direction. Next, forming a conductive layer that adjoins the side surfaces of the BPSG film, the stopper film, and a polysilicon film being part of the cylinder etch laminated mask, then removing the polysilicon film and the BPSG film .

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Patent Owner(s)

Patent OwnerAddress
LONGITUDE SEMICONDUCTOR S A R L208 VAL DES BONS MALADES LUXEMBOURG L-2121

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  • 2014 Application Filing Year
  • H01L Class
  • 23828 Applications Filed
  • 21803 Patents Issued To-Date
  • 91.51 % Issued To-Date
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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Koge, Katsumi Tokyo, JP 11 18

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  • 2 Citation Count
  • H01L Class
  • 13.47 % this patent is cited more than
  • 9 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges1792827316886303131891006776342711301 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +050010001500200025003000350040004500500055006000650070007500800085009000

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