INTEGRATED CAPACITOR IN AN INTEGRATED CIRCUIT
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United States of America Patent
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Issued Date -
Jan 28, 2016
app pub date -
Jul 22, 2014
filing date -
Jul 22, 2014
priority date (Note) -
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Abstract
An integrated capacitor includes a semiconductor substrate comprising a trench isolation area; a first interlayer dielectric (ILD) layer covering the trench isolation area; a first electrode plate comprising at least a first contact layer in the first ILD layer, wherein the contact layer is disposed directly on the trench isolation area; a second electrode plate in the first ILD layer; and a capacitor dielectric structure between the first electrode plate and the second electrode plate.
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