SEMICONDUCTOR DEVICE EMPLOYING DVFS FUNCTION

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United States of America Patent

SERIAL NO

14876117

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Disclosed herein is a device that includes: a memory cell array including a plurality of memory cells, the memory cell array operates on a first internal voltage; a peripheral circuit accessing selected one or ones of the memory cells, the peripheral circuit operates on a second internal voltage; a first internal voltage generation circuit that supplies the first internal voltage to the memory cell array; and a second internal voltage generation circuit that supplies the second internal voltage to the peripheral circuit. The second internal voltage generation circuit sets the second internal voltage to a first voltage value in a first mode, and to a second voltage value that is different from the first voltage value in a second mode. The first internal voltage generation circuit sets the first internal voltage to a third voltage value in both the first and second modes.

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Patent Owner(s)

Patent OwnerAddress
LONGITUDE SEMICONDUCTOR S A R L208 VAL DES BONS MALADES LUXEMBOURG L-2121

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
KAJIGAYA, Kazuhiko Tokyo, JP 258 3805
SUZUKI, Takamasa Tokyo, JP 105 728

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  • 10.29 % this patent is cited more than
  • 9 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges2621581362137774127158742501 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +010020030040050060070080090010001100120013001400150016001700

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