METHOD OF DESIGNING A PASSAGE THROUGH A WEIR FOR ALLOWING DILUTIONS OF IMPURITIES
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United States of America Patent
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Issued Date -
Jan 28, 2016
app pub date -
Jul 25, 2014
filing date -
Jul 25, 2014
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Abstract
A method for growing a crystal ingot from a melt in a crystal growing system is provided. The system includes a crucible and a barrier disposed within the crucible. The method includes identifying a Peclet number (Pe) with an advective transport rate that is less than a diffusive transport rate, calculating a cross-sectional area of a passage to be formed in the barrier based on the identified Peclet number to allow outward diffusion of impurities through the passage during growth of the crystal ingot, and growing the crystal ingot using the barrier having the passage formed therein.
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