METHOD AND DEVICE OF MANUFACTURING COMPOUND-SEMICONDUCTOR THIN-FILM
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United States of America Patent
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Jan 21, 2016
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Mar 7, 2014
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Mar 7, 2013
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The invention is to provide a method of manufacturing I-III-VI and I-II-IV-VI compound semiconductor thin-films, wherein a compound semiconductor crystal is efficiently grown to form a large grain diameter and the content of each of the elements contained in the compound semiconductor can be controlled. A substrate in which a I-III-VI or I-II-IV-VI compound semiconductor thin-film formed on the surface is heated such that a first temperature of the substrate is 100° C. to 700° C., then a non-oxidizing gas heated to a second temperature that is higher than the first temperature is flowed within a chamber so that the compound semiconductor thin-film formed on the surface of the substrate is thermally treated.
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