FINFET WITH BACK-GATE

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United States of America Patent

APP PUB NO 20160020326A1
SERIAL NO

14777225

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Abstract

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The present invention relates to a double-gate finFET comprising: at least two fins (FIN) realizing a single channel; a back-gate (BG) placed between the fins; and a front-gate (FG), placed outside of the fins. Further, the invention relates to a manufacturing process, resulting in the double-gate finFET.

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Patent Owner(s)

Patent OwnerAddress
SOITECPARC TECHNOLOGIQUE DES FONTAINES CHEMIN DES FRANQUES BERNIN 38190

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
HOFMANN, Franz Munchen, DE 157 4420
MAZURE, Carlos Bernin, FR 63 1128

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