SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE USING SAME
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United States of America Patent
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Jan 21, 2016
app pub date -
Dec 3, 2013
filing date -
Dec 5, 2012
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Abstract
The problem addressed by the present invention is to provide a semiconductor device capable of improving dv/dt controllability via a gate drive circuit during turn-on switching. The semiconductor device comprises a plurality of trench gate groups, each trench gate group including mutually adjoining three or more trench gates, and the distance between adjoining two trench gate groups is larger than the distance between adjoining two trench gates in one trench gate group. Thereby, gate-emitter capacity increases, and therefore the semiconductor device may improve dv/dt controllability via a gate drive circuit during turn-on switching.
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