Edge Termination Using Guard Rings Between Recessed Field Oxide Regions
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
N/A
app pub date -
Jul 2, 2015
filing date -
Jul 18, 2014
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
An edge termination structure is disclosed. The edge termination structure includes an active cell in a semiconductor wafer, an edge termination region adjacent the active cell in the semiconductor wafer, where the edge termination region includes recessed field oxide regions and guard rings adjacent to the active cell. At least one of the guard rings has a depth greater than a depth of at least one of the recessed field oxide regions. A top surface of each of the recessed field oxide regions is substantially coplanar with a top surface of the semiconductor wafer and with a top surface of each of the guard rings. The recessed field oxide regions may be thermally grown in recesses in the semiconductor wafer. The recessed field oxide regions may include silicon dioxide.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully