Super junction semiconductor device

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United States of America Patent

PATENT NO 9865677
SERIAL NO

14798756

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Abstract

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Provided is a super junction semiconductor device. The super junction semiconductor device includes a vertical pillar region located in an active region and horizontal pillar regions located in a termination region that are connected with each other while simultaneously not floating the entire pillar region in the termination region. Thus, a charge compensation difference, generated among pillar regions, is caused to be offset, although the length of the termination region is relatively short.

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Patent Owner(s)

  • MAGNACHIP SEMICONDUCTOR, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cho, Moon Soo Seoul, KR 10 45
Choi, Chang Yong Seoul, KR 11 44
Jun, Kwang Yeon Bucheon-si, KR 5 37
Kang, Ki Tae Gumi-si, KR 15 83
Kim, Dae Byung Cheongju-si, KR 3 21
Kwon, Soon Tak Seongnam-si, KR 4 37
Woo, Hyuk Incheon-si, KR 27 73

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