SEMICONDUCTOR STRUCTURE WITH SPARE CELL REGION

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United States of America Patent

APP PUB NO 20160020199A1
SERIAL NO

14331233

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Abstract

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A semiconductor structure includes a first spare cell region, a first conductive line and a second conductive line. The first spare cell region has a plurality of spare cells. The first conductive line is coupled between a first reference voltage and the plurality of spare cells, and is arranged for providing the first reference voltage to the plurality of spare cells of the first spare cell region. The second conductive line is coupled to a plurality of spare cells, and is arranged for providing a second reference voltage to the plurality of spare cells of the first spare cell region.

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Patent Owner(s)

Patent OwnerAddress
MEDIATEK INCNO 1 DUSING RD 1ST SCIENCE-BASED INDUSTRIAL PARK HSIN-CHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Yu-Tung Hsinchu City, TW 8 53
Fu, Chih-Hsin Hsinchu City, TW 1 4

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