PLASMA GENERATION DEVICE, METHOD OF CONTROLLING CHARACTERISTIC OF PLASMA, AND SUBSTRATE PROCESSING DEVICE USING SAME
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United States of America Patent
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Issued Date -
Jan 21, 2016
app pub date -
Aug 12, 2014
filing date -
Jul 16, 2014
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Abandoned
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Abstract
Provided are a plasma generation device, a method of controlling a characteristic of plasma, and a substrate processing device using the same. The plasma generation device includes a first radio frequency (RF) power supply supplying a first RF signal; a chamber supplying a space in which plasma is generated; a plasma source installed at the chamber, wherein the plasma source receives the first RF signal and generates plasma; a second RF power supply supplying a second RF signal; a direct current (DC) bias power supply supplying a DC bias signal; and an electrode arranged in the chamber, wherein the electrode receives an overlap signal obtained by overlapping the second RF signal and the DC bias signal and controls a characteristic of the plasma.
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