PLASMA GENERATING APPARATUS USING DUAL PLASMA SOURCE AND SUBSTRATE TREATING APPARATUS INCLUDING THE SAME
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United States of America Patent
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Issued Date -
Jan 21, 2016
app pub date -
Aug 25, 2014
filing date -
Jul 16, 2014
priority date (Note) -
Abandoned
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Abstract
Provided is a plasma generating apparatus using a dual plasma source and a substrate treating apparatus including the same. A plasma generating apparatus may include: an RF power source supplying an RF signal; a plasma chamber providing a space for generating plasma; a first plasma source disposed on a portion of the plasma chamber to generate plasma; and a second plasma source disposed on another portion of the plasma chamber to generate plasma wherein the second source comprises a plurality of gas supply loops disposed along a circumference of the plasma chamber and supplied with a process gas therein to supply the process gas to the plasma chamber; and a plurality of electromagnetic field applicators coupled to the gas supply loop and receiving the RF signal to generate plasma from the process gas.
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