COMPUTER IMPLEMENTED METHOD FOR CALCULATING A CHARGE DENSITY AT A GATE INTERFACE OF A DOUBLE GATE TRANSISTOR
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United States of America Patent
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Jan 12, 2016
Grant Date -
Jan 21, 2016
app pub date -
Jul 16, 2014
filing date -
Jul 16, 2014
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Abstract
A computer implemented method for calculating a charge density q1 of a first gate of a double gate transistor comprising a thin body with a first and a second gate interface, the method including determining, using a physical processor, an initial estimate q1,init of the charge density of the first gate; performing, using the physical processor, at least two basic corrections of the initial estimate based on a Taylor development of a function fzero(q1) able to be nullified by a correct value of the charge density q1 of the first gate.
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