Depletion Mode MOSFET Power Supply

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United States of America Patent

APP PUB NO 20160013789A1
SERIAL NO

14794586

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Abstract

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A low current power supply circuit is described that includes a depletion mode metal-oxide-semiconductor field-effect transistor (MOSFET) having a gate, a source and a drain. The drain is connectable to a power source and the source provides an output voltage for the power supply. A zener diode is connected to the gate of the depletion mode MOSFET configured to operating in its break down mode. A resistor is connected between the source and the gate of the depletion mode MOSFET and is operable to limit current to the zener diode such that the zener diode is kept in a breakdown state during operation. An output capacitor connected between the output voltage and ground.

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Patent Owner(s)

Patent OwnerAddress
NUMEREX CORP1600 PARKWOOD CIRCLE SUITE 200 ATLANTA GA 30339

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Keller, John Plano, US 39 1279
Montrose, Rodney C Allen, US 13 106
Smith, Jeffrey O Dallas, US 24 316

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