SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
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United States of America Patent
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Issued Date -
Jan 14, 2016
app pub date -
Mar 3, 2014
filing date -
Mar 5, 2013
priority date (Note) -
Abandoned
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Abstract
One semiconductor device includes an element-isolation region formed on a semiconductor substrate, an active region surrounded by said element-isolation region, a semiconductor pillar in the active region and protruding from the surface of the substrate, a gate electrode on a side surface of the pillar, with a gate-insulating film interposed there between, and extending in a first direction, a pillar-top diffusion layer in the top-end section of the pillar, a pillar-bottom diffusion layer in the bottom-end section of the pillar, a channel section between the pillar-top diffusion layer and the pillar-bottom diffusion layer, a silicide layer beneath the pillar-bottom diffusion layer and extending in a second direction perpendicular to the first direction, a contact plug to contact the silicide layer in the bottom-end section, and top-layer wiring to contact the contact plug in the top-end section. The contact plug is connected to the silicide layer through the pillar-bottom diffusion layer.
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