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Abstract

The present disclosure relates to the technical field of radio frequency power devices, and more specifically, to a radio frequency power device for implementing the self-position alignment of asymmetric source, drain and gate and the production method thereof. In the radio frequency power device for implementing asymmetric self-alignment of the source, drain and gate according to the present disclosure, gate sidewalls are utilized to implement the self-position alignment of the source, drain and gate, thereby reducing parameter drift of products; besides, the source and drain of the device can be formed by the alloying process, the iron implanting process or epitaxy process after formation of the gate since the gate is protected by the passivating layer, featuring a simple technological process while reducing the parasitic source-drain resistances and enhancing the electrical properties of the radio is frequency power device.

First Claim