METHODS OF FORMING ISOLATED CHANNEL REGIONS FOR A FINFET SEMICONDUCTOR DEVICE AND THE RESULTING DEVICE
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United States of America Patent
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app pub date -
Sep 21, 2015
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Mar 24, 2014
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Abstract
A fin structure is formed in and above a substrate and includes a portion of a substrate semiconductor material, a first epi semiconductor material formed above the substrate semiconductor material portion, and a second epi semiconductor material formed above the first epi semiconductor material. A sacrificial gate structure is formed above the fin structure, a sidewall spacer is formed adjacent the sacrificial gate structure, and at least one etching process is performed to remove portions of the fin structure positioned laterally outside of the sidewall spacer so as to define a fin cavity source/drain regions and to expose edges of the fin structure positioned under the spacer. An epi etch stop layer is formed on the exposed edges of the fin structure and within the fin cavity, and the first epi semiconductor material is removed selectively from the fin structure so as to form a channel cavity therein.
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