METHOD AND SYSTEM FOR GALLIUM NITRIDE ELECTRONIC DEVICES USING ENGINEERED SUBSTRATES
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United States of America Patent
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app pub date -
Feb 9, 2015
filing date -
Aug 10, 2012
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Abandoned
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Abstract
A method for fabricating an electronic device includes providing an engineered substrate structure comprising a III-nitride seed layer, forming GaN-based functional layers coupled to the III-nitride seed layer, and forming a first electrode structure electrically coupled to at least a portion of the GaN-based functional layers. The method also includes joining a carrier substrate opposing the GaN-based functional layers and removing at least a portion of the engineered substrate structure. The method further includes forming a second electrode structure electrically coupled to at least another portion of the GaN-based functional layers and removing the carrier substrate.
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