Apparatus For Generating Plasma Using Dual Plasma Source And Apparatus For Treating Substrate Including The Same
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United States of America Patent
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Jan 14, 2016
app pub date -
Aug 13, 2014
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Jul 8, 2014
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Abstract
The present invention relates to an apparatus for generating plasma using a dual plasma source and a substrate treatment apparatus including the same. A plasma generation apparatus according to an embodiment of the present invention includes: an RF power supply configured to supply an RF signal; a plasma chamber configured to provide a space in which plasma is generated; a first plasma source installed at one part of the plasma chamber to generate plasma; and a second plasma source installed at the other part of the plasma chamber to generate plasma, the second plasma source including: a plurality of insulating loops formed along a circumference of the plasma chamber, wherein a gas passage through which a process gas is injected and moved to the plasma chamber is provided in each insulating loop; and a plurality of electromagnetic field appliers coupled to the insulating loops and receiving the RF signal to excite the process gas moved through the gas passage to a plasma state.
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