Planar Structure Solar Cell with Inorganic Hole Transporting Material
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United States of America Patent
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Issued Date -
Jan 7, 2016
app pub date -
Jul 1, 2014
filing date -
Jul 1, 2014
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Abandoned
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Abstract
A method is provided for forming a planar structure solar cell. Generally, the method forms a transparent conductive electrode, with a planar layer of a first metal oxide adjacent to the transparent conductive electrode. For example, the first metal oxide may be an n-type metal oxide. A semiconductor absorber layer is formed adjacent to the first metal oxide, comprising organic and inorganic materials. A p-type semiconductor hole-transport material (HTM) layer is formed adjacent to the semiconductor absorber layer, and a metal electrode is formed. adjacent to the HTM layer. In one aspect, the HTM layer is an inorganic material such as a p-type metal oxide. Some explicit examples of HTM materials include stoichiometric and non-stoichiometric molybdenum (VI) oxide, stoichiometric and non-stoichiometric vanadium (V) oxide, stoichiometric and non-stoichiometric nickel (II) oxide, and stoichiometric and non-stoichiometric copper (I) oxide. Also provide are planar solar cell devices.
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