MEMORY CELLS HAVING A FIRST SELECTING CHALCOGENIDE MATERIAL AND A SECOND SELECTING CHALCOGENIDE MATERIAL AND METHODS THEROF
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United States of America Patent
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Issued Date -
Jan 7, 2016
app pub date -
Jul 1, 2014
filing date -
Jul 1, 2014
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Abandoned
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Abstract
The present disclosure includes memory cells and methods of forming the same. The memory cells disclosed herein can include a first selecting chalcogenide material, a second selecting chalcogenide material, and a storage material.
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