Group III-V Transistor Utilizing a Substrate Having a Dielectrically-Filled Region
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United States of America Patent
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Issued Date -
Jan 7, 2016
app pub date -
Jun 8, 2015
filing date -
Jul 2, 2014
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Abandoned
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Abstract
There are disclosed herein various implementations of a group III-V transistor utilizing a substrate having a dielectrically-filled region. A semiconductor structure providing such a group III-V transistor includes a group IV substrate having the dielectrically-filled region, and a group III-V body situated over a top surface of the group IV substrate. The group III-V body includes a group III-V transistor having a top drain electrode, a top gate electrode, and a top source electrode. The group III-V transistor is situated substantially over the dielectrically-filled region of the substrate so as to increase a breakdown voltage of the group III-V transistor, and to also reduce an Rdson of the group III-V transistor.
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