Group III-V Lateral Transistor with Backside Contact
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United States of America Patent
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Issued Date -
Jan 7, 2016
app pub date -
Jun 8, 2015
filing date -
Jul 2, 2014
priority date (Note) -
Abandoned
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Abstract
There are disclosed herein various implementations of a group III-V transistor with a voltage controlled substrate. A semiconductor structure providing such a group III-V transistor includes a group IV substrate having a dielectrically-filled region, and a group III-V body situated over a top surface of the group IV substrate. The group III-V body includes a group III-V transistor having a top drain electrode, a top gate electrode, and a top source electrode. The semiconductor structure also includes a source-side via extending through the group III-V body to couple the top source electrode to a source-side region of the group IV substrate. The source-side region of the group IV substrate is further coupled to a bottom source contact situated under a bottom surface of the group IV substrate.
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