METHOD FOR FORMING ALIGNED OXIDE SEMICONDUCTOR WIRE PATTERN AND ELECTRONIC DEVICE USING SAME
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United States of America Patent
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Jan 7, 2016
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Feb 18, 2014
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Feb 18, 2013
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A method for forming an aligned oxide semiconductor wire pattern includes: dissolving an oxide semiconductor precursor and an organic polymer in distilled water or an organic solvent to provide a composite solution of an oxide semiconductor precursor/organic polymer; continuously discharging the composite solution of the oxide semiconductor precursor/organic polymer in a vertical upper direction from a substrate to align an oxide semiconductor precursor/organic polymer composite wire on the substrate; and heating the oxide semiconductor precursor/organic polymer composite wire to remove the organic polymer and converting the oxide semiconductor precursor into an oxide semiconductor to form an aligned oxide semiconductor wire pattern.
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