Systems and Methods of Sectioned Bit Line Memory Arrays, Including Hierarchical and/or Other Features

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United States of America Patent

SERIAL NO

14855316

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Abstract

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A sectioned bit line of an SRAM memory device, an SRAM memory device having a sectioned bit line, and associated systems and methods are described, including embodiments having sectioned bit lines with hierarchical aspects. In one illustrative implementation, each sectioned bit line may comprise a local bit line, a memory cell connected to the local bit line, and a pass gate coupled to the local bit line, wherein the pass gate is configured to be coupled to a global bit line. Further, in some embodiments, the sectioned bit lines are arranged in hierarchical arrays. In other implementations, SRAM memory devices may be configured involving sectioned bit lines (including hierarchical) and a global bit line wherein the pass gates are configured to connect and isolate the sectioned bit line and the global bit line.

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Patent Owner(s)

Patent OwnerAddress
GSI TECHNOLOGY INC1213 ELKO DRIVE SUNNYVALE CA 94089

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
LEE, Hsin You S Campbell, US 7 204
SHU, Lee-Lean Los Altos, US 51 1202
TUNG, Chenming W Fremont, US 6 146

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