METHOD AND APPARATUS FOR DEPOSITING A MONOLAYER ON A THREE DIMENSIONAL STRUCTURE

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United States of America Patent

SERIAL NO

14324907

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Abstract

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In one embodiment, a processing apparatus may include a plasma chamber configured to generate a plasma; a process chamber adjacent the plasma chamber and configured to house a substrate that defines a substrate plane; an extraction system adjacent the plasma chamber and configured to direct an ion beam from the plasma to the substrate, the ion beam forming a non-zero angle with respect to a perpendicular to the substrate plane; and a molecular chamber adjacent the process chamber, isolated from the plasma chamber and configured to deliver a molecular beam to the substrate, wherein the ion beam and molecular beam are alternately delivered to the substrate to form a monolayer comprising species from the ion beam and molecular beam.

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Patent Owner(s)

Patent OwnerAddress
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES INC35 DORY ROAD GLOUCESTER MA 01930

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Omstead, Thomas R Gloucester, US 36 1888

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